| No. |
Part Name |
Description |
Manufacturer |
| 4681 |
BF1212 |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4682 |
BF1212R |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4683 |
BF1212WR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4684 |
BF1214 |
Dual N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4685 |
BF1215 |
Dual N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4686 |
BF1216 |
Dual N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4687 |
BF1217WR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4688 |
BF1218 |
Dual N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4689 |
BF2000 |
Silicon N Channel MOSFET Tetrode |
Siemens |
| 4690 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 4691 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 4692 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 4693 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 4694 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 4695 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 4696 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 4697 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 4698 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 4699 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 4700 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 4701 |
BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB |
Infineon |
| 4702 |
BF904 |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4703 |
BF904A |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4704 |
BF904AR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4705 |
BF904AWR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4706 |
BF904R |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4707 |
BF904WR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4708 |
BF908 |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4709 |
BF908R |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 4710 |
BF908WR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
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