No. |
Part Name |
Description |
Manufacturer |
481 |
EDZVT2R2.2B |
Zener Diode |
ROHM |
482 |
EVPAE |
Tactile Switches (Light Touch Switches) - 4.5mm x 2.2mm Side-operational Edge Mount |
Panasonic |
483 |
EXO-3-12.288M |
Crystal oscillator for uPs with programmable output, 12.288MHz |
Wolfgang Knap |
484 |
EXO-3-12.288M |
Crystal oscillator for uPs with programmable output, 12.288MHz |
Wolfgang Knap |
485 |
FDI9406_F085 |
N-Channel Power Trench� MOSFET 40V, 110A, 2.2m? |
Fairchild Semiconductor |
486 |
FDMS8333 |
N-Channel Power Trench MOSFET 40V, 49A, 2.2mOhms |
Fairchild Semiconductor |
487 |
FDP8440 |
N-Channel Logic Level PowerTrench� MOSFET 40V, 277A, 2.2m? |
Fairchild Semiconductor |
488 |
FLZ2V2 |
2.2V, 0.5W Zener Diode |
Fairchild Semiconductor |
489 |
FP100F |
10000 V rectifier stack 2.2 A forward current, 150 ns recovery time |
Voltage Multipliers |
490 |
FP100S |
10000 V rectifier stack 2.2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
491 |
FP125F |
12500 V rectifier stack 2.2 A forward current, 150 ns recovery time |
Voltage Multipliers |
492 |
FP125S |
12500 V rectifier stack 2.2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
493 |
FP150F |
15000 V rectifier stack 2.2 A forward current, 150 ns recovery time |
Voltage Multipliers |
494 |
FP150S |
15000 V rectifier stack 2.2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
495 |
FP175F |
17500 V rectifier stack 2.2 A forward current, 150 ns recovery time |
Voltage Multipliers |
496 |
FP175S |
17500 V rectifier stack 2.2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
497 |
FP200F |
20000 V rectifier stack 2.2 A forward current, 150 ns recovery time |
Voltage Multipliers |
498 |
FP200S |
20000 V rectifier stack 2.2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
499 |
GL-166B-85-2.2 |
Geode Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
500 |
GL-166P-85-2.2 |
Geode Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
501 |
GL-180B-85-2.2 |
Geode Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
502 |
GL-180P-85-2.2 |
Geode Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
503 |
GL-200B-85-2.2 |
Geode Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
504 |
GL-200P-85-2.2 |
Geode Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
505 |
GMS34112TK |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
506 |
GMS34112TM |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
507 |
GMS34140TK |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 300KHz-500KHz at KHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
508 |
GMS34140TM |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
509 |
GMS81516BT |
ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
Hynix Semiconductor |
510 |
GMS81524BT |
ROM/RAM size:24 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
Hynix Semiconductor |
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