| No. |
Part Name |
Description |
Manufacturer |
| 571 |
IR1153STRPBF |
One Cycle Control PFC IC designed to operate in continuous conduction mode (CCM), Fixed 22.2kHz switching frequency |
International Rectifier |
| 572 |
IRF420 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 573 |
IRF421 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 574 |
IRF422 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 575 |
IRF423 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 576 |
IRF710-713 |
N-Channel Power MOSFETs/ 2.25A/ 350-400V |
Fairchild Semiconductor |
| 577 |
IRF711 |
N-Channel Power MOSFETs/ 2.25A/ 350-400V |
Fairchild Semiconductor |
| 578 |
IRF712 |
N-Channel Power MOSFETs/ 2.25A/ 350-400V |
Fairchild Semiconductor |
| 579 |
IRF713 |
N-Channel Power MOSFETs/ 2.25A/ 350-400V |
Fairchild Semiconductor |
| 580 |
IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A |
SGS Thomson Microelectronics |
| 581 |
IRF823 |
N-channel MOSFET, 450V, 2.2A |
SGS Thomson Microelectronics |
| 582 |
IRFD022 |
MOSPOWER N-Channel Enhancement Mode Transistor 50V 2.2A 0.12 ohms |
Siliconix |
| 583 |
IRFF210 |
2.2A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
| 584 |
IRFF210 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 2.2A |
Siliconix |
| 585 |
IRFF211 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 2.2A |
Siliconix |
| 586 |
IRFF432 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.25A |
Siliconix |
| 587 |
IRFF433 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.25A |
Siliconix |
| 588 |
IRFIBC30 |
Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=2.5A) |
International Rectifier |
| 589 |
IRFR214 |
2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs |
Intersil |
| 590 |
IRFU214 |
2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs |
Intersil |
| 591 |
IRG4BC20KDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
International Rectifier |
| 592 |
IRG4BC20KS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
International Rectifier |
| 593 |
IRG4BC30 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
International Rectifier |
| 594 |
IRG4BC30KDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
International Rectifier |
| 595 |
IRG4BC30KS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
International Rectifier |
| 596 |
IRKTF131-04HL |
V(rrm): 400V; V(ce): 2.25V; 130A fast thyristor/diode and thyristor/thyristor. For self-commutated inverters, DC choppers, electronic welders, induction heating, etc. |
International Rectifier |
| 597 |
IRKTF131-04HLN |
V(rrm): 400V; V(ce): 2.25V; 130A fast thyristor/diode and thyristor/thyristor. For self-commutated inverters, DC choppers, electronic welders, induction heating, etc. |
International Rectifier |
| 598 |
IRKTF131-08HL |
V(rrm): 800V; V(ce): 2.25V; 130A fast thyristor/diode and thyristor/thyristor. For self-commutated inverters, DC choppers, electronic welders, induction heating, etc. |
International Rectifier |
| 599 |
IRKTF131-08HLN |
V(rrm): 800V; V(ce): 2.25V; 130A fast thyristor/diode and thyristor/thyristor. For self-commutated inverters, DC choppers, electronic welders, induction heating, etc. |
International Rectifier |
| 600 |
IRKTF132-04HL |
V(rrm): 400V; V(ce): 2.25V; 130A fast thyristor/diode and thyristor/thyristor. For self-commutated inverters, DC choppers, electronic welders, induction heating, etc. |
International Rectifier |
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