| No. |
Part Name |
Description |
Manufacturer |
| 4831 |
GT30J301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 4832 |
GT30J311 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 4833 |
GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
| 4834 |
GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 4835 |
GT30J341 |
Discrete IGBT |
TOSHIBA |
| 4836 |
GT35J321 |
IGBT for soft switching applications |
TOSHIBA |
| 4837 |
GT35MR21 |
IGBT for soft switching applications |
TOSHIBA |
| 4838 |
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications |
TOSHIBA |
| 4839 |
GT40J121 |
IGBT for soft switching applications |
TOSHIBA |
| 4840 |
GT40J321 |
IGBT for soft switching applications |
TOSHIBA |
| 4841 |
GT40J322 |
IGBT for soft switching applications |
TOSHIBA |
| 4842 |
GT40J325 |
IGBT for soft switching applications |
TOSHIBA |
| 4843 |
GT40M101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 4844 |
GT40M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 4845 |
GT40Q321 |
Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching Application |
TOSHIBA |
| 4846 |
GT40Q322 |
Voltage Resonance Inverter Switching Application |
TOSHIBA |
| 4847 |
GT40QR21 |
IGBT for soft switching applications |
TOSHIBA |
| 4848 |
GT40RR21 |
IGBT for soft switching applications |
TOSHIBA |
| 4849 |
GT40T101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 4850 |
GT40T301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications |
TOSHIBA |
| 4851 |
GT40T321 |
IGBT for soft switching applications |
TOSHIBA |
| 4852 |
GT40WR21 |
IGBT for soft switching applications |
TOSHIBA |
| 4853 |
GT50G321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications |
TOSHIBA |
| 4854 |
GT50J102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 4855 |
GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 4856 |
GT50J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 4857 |
GT50J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
| 4858 |
GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 4859 |
GT50J328 |
Discrete IGBT |
TOSHIBA |
| 4860 |
GT50J341 |
Discrete IGBT |
TOSHIBA |
| | | |
