No. |
Part Name |
Description |
Manufacturer |
4861 |
GT50J342 |
Discrete IGBT |
TOSHIBA |
4862 |
GT50JR21 |
IGBT for soft switching applications |
TOSHIBA |
4863 |
GT50JR22 |
IGBT for soft switching applications |
TOSHIBA |
4864 |
GT50MR21 |
IGBT for soft switching applications |
TOSHIBA |
4865 |
GT50N322A |
IGBT for soft switching applications |
TOSHIBA |
4866 |
GT50NR21 |
IGBT for soft switching applications |
TOSHIBA |
4867 |
GT5G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
4868 |
GT5G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
4869 |
GT5G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
4870 |
GT5G133 |
IGBT for strobe flash |
TOSHIBA |
4871 |
GT5G134 |
IGBT for strobe flash |
TOSHIBA |
4872 |
GT5J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
4873 |
GT5J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
4874 |
GT5J311(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
4875 |
GT5J331(SM) |
N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
TOSHIBA |
4876 |
GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications |
TOSHIBA |
4877 |
GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications |
TOSHIBA |
4878 |
GT60J323 |
IGBT for soft switching applications |
TOSHIBA |
4879 |
GT60J323H |
Discrete IGBT |
TOSHIBA |
4880 |
GT60M104 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
4881 |
GT60M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
4882 |
GT60M302 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
4883 |
GT60M303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
4884 |
GT60M322 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
TOSHIBA |
4885 |
GT60M322 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
TOSHIBA |
4886 |
GT60M323 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
TOSHIBA |
4887 |
GT60M323 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
TOSHIBA |
4888 |
GT60M324 |
IGBT for soft switching applications |
TOSHIBA |
4889 |
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation |
TOSHIBA |
4890 |
GT60PR21 |
IGBT for soft switching applications |
TOSHIBA |
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