| No. |
Part Name |
Description |
Manufacturer |
| 4951 |
P4KA7.5A |
Automotive Transient Voltage Suppressors Peak Pulse Power 400W |
Vishay |
| 4952 |
P4KA8.2 |
Automotive Transient Voltage Suppressors Peak Pulse Power 400W |
Vishay |
| 4953 |
P4KA8.2A |
Automotive Transient Voltage Suppressors Peak Pulse Power 400W |
Vishay |
| 4954 |
P4KA9.1 |
Automotive Transient Voltage Suppressors Peak Pulse Power 400W |
Vishay |
| 4955 |
P4KA9.1A |
Automotive Transient Voltage Suppressors Peak Pulse Power 400W |
Vishay |
| 4956 |
P4KE100 |
81.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4957 |
P4KE100A |
85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4958 |
P4KE100A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 95.0 V, Vbr(max) = 105 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4959 |
P4KE100C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 90.0 V, Vbr(max) = 110 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4960 |
P4KE100CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 95.0 V, Vbr(max) = 105 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4961 |
P4KE110 |
89.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4962 |
P4KE110A |
94.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4963 |
P4KE110A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 105 V, Vbr(max) = 116 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4964 |
P4KE110C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 99.0 V, Vbr(max) = 121 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4965 |
P4KE110CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 105 V, Vbr(max) = 116 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4966 |
P4KE120 |
97.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4967 |
P4KE120A |
102.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4968 |
P4KE120A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 114 V, Vbr(max) = 126 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4969 |
P4KE120C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 108 V, Vbr(max) = 132 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4970 |
P4KE120CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 114 V, Vbr(max) = 126 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4971 |
P4KE130 |
105.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4972 |
P4KE130A |
111.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4973 |
P4KE130A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 124 V, Vbr(max) = 137 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4974 |
P4KE130C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 117 V, Vbr(max) = 143 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4975 |
P4KE130CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 124 V, Vbr(max) = 137 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4976 |
P4KE150 |
121.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4977 |
P4KE150A |
128.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4978 |
P4KE150A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 143 V, Vbr(max) = 158 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4979 |
P4KE150C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 135 V, Vbr(max) = 165 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4980 |
P4KE150CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 143 V, Vbr(max) = 158 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
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