| No. |
Part Name |
Description |
Manufacturer |
| 4981 |
P4KE160 |
130.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4982 |
P4KE160A |
136.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4983 |
P4KE160A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 152 V, Vbr(max) = 168 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4984 |
P4KE160C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 144 V, Vbr(max) = 176 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4985 |
P4KE160CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 152 V, Vbr(max) = 168 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4986 |
P4KE170 |
138.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4987 |
P4KE170A |
145.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4988 |
P4KE170A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4989 |
P4KE170C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 153 V, Vbr(max) = 187 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4990 |
P4KE170CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4991 |
P4KE180 |
146.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4992 |
P4KE180A |
154.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4993 |
P4KE180A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4994 |
P4KE180C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4995 |
P4KE180CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4996 |
P4KE200 |
162.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4997 |
P4KE200A |
171.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4998 |
P4KE200C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 180 V, Vbr(max) = 220 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 4999 |
P4KE200CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 190 V, Vbr(max) = 210 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5000 |
P4KE220 |
175.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 5001 |
P4KE220A |
185.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 5002 |
P4KE220C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 198 V, Vbr(max) = 242 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5003 |
P4KE220CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 209 V, Vbr(max) = 231 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5004 |
P4KE250 |
202.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 5005 |
P4KE250A |
214.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 5006 |
P4KE250C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 225 V, Vbr(max) = 275 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5007 |
P4KE250CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 237 V, Vbr(max) = 263 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5008 |
P4KE300 |
243.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 5009 |
P4KE300A |
256.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 5010 |
P4KE300C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 270 V, Vbr(max) = 330 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
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