No. |
Part Name |
Description |
Manufacturer |
511 |
2N6392 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
512 |
2N6393 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
513 |
2N6394 |
12A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
514 |
2N6395 |
12A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
515 |
2N6396 |
12A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
516 |
2N6397 |
12A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
517 |
2N6398 |
12A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
518 |
2N6400 |
16A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
519 |
2N6401 |
16A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
520 |
2N6402 |
16A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
521 |
2N6403 |
16A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
522 |
2N6404 |
16A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
523 |
2N6420 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
524 |
2N6421 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
525 |
2N6422 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
526 |
2N6423 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
527 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
528 |
2N6468 |
Silicon P-N-P medium-power transistor. -130V, 40W. |
General Electric Solid State |
529 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
530 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
531 |
2N6474 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. |
General Electric Solid State |
532 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
533 |
2N6476 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. |
General Electric Solid State |
534 |
2N6477 |
MEDIUM POWER SILICON NPN TRANSISTORS |
General Electric Solid State |
535 |
2N6478 |
MEDIUM POWER SILICON NPN TRANSISTORS |
General Electric Solid State |
536 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
537 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
538 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
539 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
540 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
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