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Datasheets for SOLID STATE

Datasheets found :: 3821
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No. Part Name Description Manufacturer
571 2N6688 25 A SwitchMax power transistor. N-P-N type. General Electric Solid State
572 2N6702 High-current silicon N-P-N VERSAWATT transistor. General Electric Solid State
573 2N6703 High-current silicon N-P-N VERSAWATT transistor. General Electric Solid State
574 2N6704 High-current silicon N-P-N VERSAWATT transistor. General Electric Solid State
575 2N6751 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
576 2N6752 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
577 2N6753 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
578 2N6754 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
579 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
580 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
581 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
582 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
583 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
584 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
585 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
586 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
587 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
588 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
589 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
590 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
591 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
592 2N681 25A silicon controlled rectifier. Vrsom 35V. General Electric Solid State
593 2N681 Thyristor Controlled-rectifier RCA Solid State
594 2N682 25A silicon controlled rectifier. Vrsom 75V. General Electric Solid State
595 2N682 Thyristor Controlled-rectifier RCA Solid State
596 2N683 25A silicon controlled rectifier. Vrsom 150V. General Electric Solid State
597 2N683 Thyristor Controlled-rectifier RCA Solid State
598 2N684 25A silicon controlled rectifier. Vrsom 225V. General Electric Solid State
599 2N684 Thyristor Controlled-rectifier RCA Solid State
600 2N685 25A silicon controlled rectifier. Vrsom 300V. General Electric Solid State


Datasheets found :: 3821
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