No. |
Part Name |
Description |
Manufacturer |
571 |
2N6688 |
25 A SwitchMax power transistor. N-P-N type. |
General Electric Solid State |
572 |
2N6702 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
573 |
2N6703 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
574 |
2N6704 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
575 |
2N6751 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
576 |
2N6752 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
577 |
2N6753 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
578 |
2N6754 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
579 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
580 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
581 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
582 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
583 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
584 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
585 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
586 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
587 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
588 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
589 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
590 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
591 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
592 |
2N681 |
25A silicon controlled rectifier. Vrsom 35V. |
General Electric Solid State |
593 |
2N681 |
Thyristor Controlled-rectifier |
RCA Solid State |
594 |
2N682 |
25A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
595 |
2N682 |
Thyristor Controlled-rectifier |
RCA Solid State |
596 |
2N683 |
25A silicon controlled rectifier. Vrsom 150V. |
General Electric Solid State |
597 |
2N683 |
Thyristor Controlled-rectifier |
RCA Solid State |
598 |
2N684 |
25A silicon controlled rectifier. Vrsom 225V. |
General Electric Solid State |
599 |
2N684 |
Thyristor Controlled-rectifier |
RCA Solid State |
600 |
2N685 |
25A silicon controlled rectifier. Vrsom 300V. |
General Electric Solid State |
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