DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for -EFFECT TRANSIS

Datasheets found :: 1160
Page: | 14 | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 |
No. Part Name Description Manufacturer
511 2N6449 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
512 2N6450 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
513 2N6450 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
514 2N6451 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
515 2N6451 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
516 2N6452 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
517 2N6452 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
518 2N6453 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
519 2N6453 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
520 2N6454 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
521 2N6454 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
522 2N6550 N-Channel silicon junction field-effect transistor InterFET Corporation
523 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
524 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
525 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
526 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
527 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
528 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
529 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
530 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
531 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
532 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
533 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
534 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
535 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
536 2N7000 N-channel enhancement mode field-effect transistor Philips
537 2N7002 N-channel enhancement mode field-effect transistor Philips
538 2SJ11 Field-effect transistor TOSHIBA
539 2SJ12 Field-effect transistor TOSHIBA
540 2SJ125 150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. Isahaya Electronics Corporation


Datasheets found :: 1160
Page: | 14 | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 |



© 2024 - www Datasheet Catalog com