No. |
Part Name |
Description |
Manufacturer |
601 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
602 |
3N158 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
603 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
604 |
3N158A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
605 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
606 |
3N159 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
607 |
3N159 |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz |
RCA Solid State |
608 |
3N160 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
609 |
3N160 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
610 |
3N161 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
611 |
3N161 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
612 |
3N163 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
613 |
3N164 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
614 |
3N169 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
615 |
3N170 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
616 |
3N171 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
617 |
3N174 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
618 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
619 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
620 |
3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Vaishali Semiconductor |
621 |
3N200 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
622 |
3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Intersil |
623 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
624 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
625 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
626 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
627 |
3N204 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
628 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
629 |
3N205 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
630 |
3N205 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
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