No. |
Part Name |
Description |
Manufacturer |
511 |
AM1416-001 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
512 |
AM1416-003 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
513 |
AM79C873 |
NetPHY-1 10/100 Mbps Ethernet Physical Layer Single-Chip Transceiver with 100BASE-FX Support |
Advanced Micro Devices |
514 |
AM79C873KCW |
NetPHY -1 10/100 Mbps Ethernet Physical Layer Single-Chip Transceiver with 100BASE-FX Support |
Advanced Micro Devices |
515 |
AM79C982 |
basic Integrated Multiport Repeater (bIMR) |
Advanced Micro Devices |
516 |
AM79C982-4JC |
basic Integrated Multiport Repeater (bIMR) |
Advanced Micro Devices |
517 |
AM79C982-8JC |
basic Integrated Multiport Repeater (bIMR) |
Advanced Micro Devices |
518 |
AM79C987 |
Hardware Implemented Management Information Base (HIMIB) Device |
Advanced Micro Devices |
519 |
AM79C987JC |
Hardware Implemented Management Information Base (HIMIB) Device |
Advanced Micro Devices |
520 |
AM79C987JCB |
Hardware Implemented Management Information Base (HIMIB) Device |
Advanced Micro Devices |
521 |
AM80610-018 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
522 |
AM80610-050 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
523 |
AM81416-006 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
524 |
AM81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
525 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
526 |
AM82022-020 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
527 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
528 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
529 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
530 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
531 |
AM82223-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
532 |
AM82324-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
533 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
534 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
535 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
536 |
AMD OPTERON |
Builders Guide for AMD Opteron Processor-based Servers and Workstations, Version 1 |
Advanced Micro Devices |
537 |
AMP374P6453BT1-C1H |
64M X 72 SDRAM DIMM with ECC based on 32M X 8, 4 Banks, 8K REFRESH, 3.3V Synchronous DRAMs |
etc |
538 |
AMP374P6453BT1-C1HS |
64M X 72 SDRAM DIMM with ECC based on 32M X 8, 4 Banks, 8K REFRESH, 3.3V Synchronous DRAMs |
etc |
539 |
AMP374P6453BT1C1H |
64M X 72 SDRAM DIMM with ECC based on 32M X 8, 4 Banks, 8K REFRESH, 3.3V Synchronous DRAMs |
etc |
540 |
AN1007 |
L6561 - BASED SWITCHER REPLACES MAG AMPS IN SILVER BOXES |
SGS Thomson Microelectronics |
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