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Datasheets for BAS

Datasheets found :: 15946
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No. Part Name Description Manufacturer
391 80610-18 High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz SGS Thomson Microelectronics
392 80610-50 High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz SGS Thomson Microelectronics
393 81406 28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band SGS Thomson Microelectronics
394 81410 28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band SGS Thomson Microelectronics
395 81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
396 81416-20 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
397 81416-6 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
398 82022-20 Common base NPN silicon power transistor for telemetry applications SGS Thomson Microelectronics
399 82223-12 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
400 82223-18 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
401 82223-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
402 82223-4 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
403 82324-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
404 82327-15 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
405 82327-4 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
406 82327-6 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
407 854550-1 69.99 MHz SAW Bandpass Filter for CDMA Basestation Receiver Applications Part Number 854550-1 etc
408 856059 3G Basestation SAW Filter TriQuint Semiconductor
409 A1524D Stereo controls for volume, balance, treble, bass, possibly equivalent TDA1524A RFT
410 A274D Treble and bass adjustment (stereo), possibly equivalent TCA740A RFT
411 AB-020 BURR-BROWN SPICE BASED MACROMODELS, REV. F Burr Brown
412 AB-036 DIODE-BASED TEMPERATURE MEASUREMENT Burr Brown
413 ABC900-30E Linear Power Amplifier 30W 890-960MHz, specifically designed for cellular radio base station applications Motorola
414 ABC900-30U Linear Power Amplifier 30W 870-896MHz, specifically designed for cellular radio base station applications Motorola
415 ABC900-60E Linear Power Amplifier 30W 890-960MHz, specifically designed for cellular radio base station applications Motorola
416 AC101-QF 10/100BASE-TX Ethernet Transceiver Broadcom
417 AC101-TF 10/100 BASE - TX SINGLE-CHANNEL ALTI PHY TRANSCEIVER etc
418 AC101L 10/100BASE-TX Single PHY Transceiver Broadcom
419 AC101L-PB01-R 10 / 100 BASE-TX SINGLE-PHY TRANSCEIVER etc
420 AC164029 This powerful (200 nanosecond instruction execution) yet easy-to-program (only 35 single word instructions) CMOS OTP-based 8-bit ... Microchip


Datasheets found :: 15946
Page: | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 |



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