| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2N6475 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 272 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
| 273 |
2N6476 |
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors |
Boca Semiconductor Corporation |
| 274 |
2N6476 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. |
General Electric Solid State |
| 275 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
| 276 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
| 277 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
| 278 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
| 279 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
| 280 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
| 281 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 282 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 283 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 284 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 285 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 286 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 287 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
| 288 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 289 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 290 |
2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A |
Panasonic |
| 291 |
2SA1061 |
SILICON EPITAXAL BASE LESA TRANSISTOR |
Panasonic |
| 292 |
2SA1062 |
SILICON EPITAXAL BASE LESA TRANSISTOR |
Panasonic |
| 293 |
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. |
USHA India LTD |
| 294 |
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. |
USHA India LTD |
| 295 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 296 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 297 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 298 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 299 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 300 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
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