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Datasheets for BAS

Datasheets found :: 16212
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No. Part Name Description Manufacturer
181 2N5400 Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
182 2N5401 Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
183 2N5431 Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits Motorola
184 2N5490 NPN Power Transistor Homobase - LF amplifier and switching SESCOSEM
185 2N5492 NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6109 SESCOSEM
186 2N5494 NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6111 SESCOSEM
187 2N5496 NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6107 SESCOSEM
188 2N5550 Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
189 2N5551 Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
190 2N5629 Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. General Electric Solid State
191 2N5630 Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. General Electric Solid State
192 2N5630 Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
193 2N5631 Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. General Electric Solid State
194 2N5631 Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
195 2N5781 Silicon P-N-P epitaxial-base transistor. -80V, 10W. General Electric Solid State
196 2N5782 Silicon P-N-P epitaxial-base transistor. -65V, 10W. General Electric Solid State
197 2N5783 Silicon P-N-P epitaxial-base transistor. -45V, 10W. General Electric Solid State
198 2N5784 Silicon N-P-N epitaxial-base transistor. 80V, 10W. General Electric Solid State
199 2N5785 Silicon N-P-N epitaxial-base transistor. 65V, 10W. General Electric Solid State
200 2N5786 Silicon N-P-N epitaxial-base transistor. 45V, 10W. General Electric Solid State
201 2N5871 PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
202 2N5871 Silicon PNP EPIBASE AF Power Transistor IPRS Baneasa
203 2N5871/1 PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
204 2N5871/1 Silicon PNP EPIBASE AF Power Transistor IPRS Baneasa
205 2N5871/2 PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
206 2N5871/2 Silicon PNP EPIBASE AF Power Transistor IPRS Baneasa
207 2N5872 PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
208 2N5872 Silicon PNP EPIBASE AF Power Transistor IPRS Baneasa
209 2N5872A PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
210 2N5872A Silicon PNP EPIBASE AF Power Transistor IPRS Baneasa


Datasheets found :: 16212
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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