No. |
Part Name |
Description |
Manufacturer |
181 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
182 |
2N5871 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
183 |
2N5871/1 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
184 |
2N5871/2 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
185 |
2N5872 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
186 |
2N5872A |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
187 |
2N5872B |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
188 |
2N5873 |
Silicon NPN EPIBASE AF Power Transistor |
IPRS Baneasa |
189 |
2N5873/1 |
Silicon NPN EPIBASE AF Power Transistor |
IPRS Baneasa |
190 |
2N5873/2 |
Silicon NPN EPIBASE AF Power Transistor |
IPRS Baneasa |
191 |
2N5874 |
Silicon NPN EPIBASE Audiofrequency power transistor |
IPRS Baneasa |
192 |
2N5874A |
Silicon NPN EPIBASE Audiofrequency power transistor |
IPRS Baneasa |
193 |
2N5874B |
Silicon NPN EPIBASE Audiofrequency power transistor |
IPRS Baneasa |
194 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
195 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
196 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
197 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
198 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
199 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
200 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
201 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
202 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
203 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
204 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
205 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
206 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
207 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
208 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
209 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
210 |
2N6054 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
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