| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N4901 |
PNP silicon transistor, epitaxial base |
Comset Semiconductors |
| 152 |
2N4901 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 153 |
2N4902 |
PNP silicon transistor, epitaxial base |
Comset Semiconductors |
| 154 |
2N4902 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 155 |
2N4903 |
PNP silicon transistor, epitaxial base |
Comset Semiconductors |
| 156 |
2N4903 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 157 |
2N4904 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 158 |
2N4905 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 159 |
2N4906 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 160 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 161 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 162 |
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 163 |
2N5089 |
Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 164 |
2N5190 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 165 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 166 |
2N5191 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 167 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 168 |
2N5192 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 169 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 170 |
2N5193 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
| 171 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 172 |
2N5194 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
| 173 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 174 |
2N5195 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
| 175 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 176 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 177 |
2N5294 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM132 |
SESCOSEM |
| 178 |
2N5296 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM133 |
SESCOSEM |
| 179 |
2N5298 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM134 |
SESCOSEM |
| 180 |
2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE |
SemeLAB |
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