| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 122 |
2N3790 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 123 |
2N3790 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 124 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 125 |
2N3791 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 126 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
| 127 |
2N3791 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 128 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 129 |
2N3792 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 130 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
| 131 |
2N3792 |
PNP SILICON EPITAXIAL BASE POWER TANSISTORS |
SemeLAB |
| 132 |
2N3792 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 133 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 134 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 135 |
2N3904 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 136 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 137 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 138 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 139 |
2N4124 |
General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 140 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 141 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 142 |
2N4347 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 143 |
2N4348 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 144 |
2N4400 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 145 |
2N4401 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 146 |
2N4402 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 147 |
2N4403 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 148 |
2N4898X |
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR |
SemeLAB |
| 149 |
2N4899X |
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR |
SemeLAB |
| 150 |
2N4900X |
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR |
SemeLAB |
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