No. |
Part Name |
Description |
Manufacturer |
211 |
2N6055 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
212 |
2N6056 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
213 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
214 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
215 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
216 |
2N6099 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM141 |
SESCOSEM |
217 |
2N6101 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM142 |
SESCOSEM |
218 |
2N6106 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
219 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
220 |
2N6107 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
221 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
222 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
223 |
2N6108 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
224 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
225 |
2N6109 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
226 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
227 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
228 |
2N6110 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
229 |
2N6110 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
230 |
2N6111 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
231 |
2N6111 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
232 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
233 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
234 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
235 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
236 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
237 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
238 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
239 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
240 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
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