No. |
Part Name |
Description |
Manufacturer |
511 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
512 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
513 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
514 |
2N5919 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
515 |
2N5919A |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
516 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
517 |
2N5921 |
5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
518 |
2N5954 |
Silicon P-N-P medium-power transistor. -90V, 40W. |
General Electric Solid State |
519 |
2N5955 |
Silicon P-N-P medium-power transistor. -70V, 40W. |
General Electric Solid State |
520 |
2N5956 |
Silicon P-N-P medium-power transistor. -50V, 40W. |
General Electric Solid State |
521 |
2N5995 |
7W, (CW) 175-MHz Silicon NPN Overlay RF Transistor for 12.5 Volt applications in VHF |
RCA Solid State |
522 |
2N6027 |
Programmable unijunction transistor. |
General Electric Solid State |
523 |
2N6028 |
Programmable unijunction transistor. |
General Electric Solid State |
524 |
2N6032 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
525 |
2N6033 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
526 |
2N6043 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
527 |
2N6044 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
528 |
2N6045 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
529 |
2N6050 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
530 |
2N6051 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
531 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
532 |
2N6055 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
533 |
2N6056 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
534 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
535 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
536 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
537 |
2N6076 |
PNP silicon transistor. 25V, 100mA. |
General Electric Solid State |
538 |
2N6077 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
539 |
2N6078 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
540 |
2N6079 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
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