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Datasheets for D STA

Datasheets found :: 5643
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No. Part Name Description Manufacturer
541 2N6093 75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode RCA Solid State
542 2N6104 Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note RCA Solid State
543 2N6104 30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor RCA Solid State
544 2N6105 60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note RCA Solid State
545 2N6105 Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note RCA Solid State
546 2N6105 Hotspotting in RF Power Transistors - Application Note RCA Solid State
547 2N6105 30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor RCA Solid State
548 2N6106 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. General Electric Solid State
549 2N6107 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. General Electric Solid State
550 2N6108 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. General Electric Solid State
551 2N6109 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. General Electric Solid State
552 2N6110 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. General Electric Solid State
553 2N6111 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. General Electric Solid State
554 2N6121 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. General Electric Solid State
555 2N6122 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
556 2N6123 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
557 2N6124 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. General Electric Solid State
558 2N6125 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. General Electric Solid State
559 2N6126 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. General Electric Solid State
560 2N6188 100 V, 10 A high speed PNP transistor Solid State Devices Inc
561 2N6189 100 V, 10 A high speed PNP transistor Solid State Devices Inc
562 2N6192 100 V, 5 A high speed PNP transistor Solid State Devices Inc
563 2N6193 100 V, 5 A high speed PNP transistor Solid State Devices Inc
564 2N6211 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
565 2N6212 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
566 2N6213 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
567 2N6214 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
568 2N6246 Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. General Electric Solid State
569 2N6247 Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. General Electric Solid State
570 2N6248 Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. General Electric Solid State


Datasheets found :: 5643
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