| No. |
Part Name |
Description |
Manufacturer |
| 511 |
2N5908 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
| 512 |
2N5909 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
| 513 |
2N5961 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 514 |
2N5961_D27Z |
NPN General Purpose Amplifer |
Fairchild Semiconductor |
| 515 |
2N5962 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 516 |
2N5962_D74Z |
NPN General Purpose Amplifer |
Fairchild Semiconductor |
| 517 |
2N6312 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 518 |
2N6483 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 519 |
2N6484 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 520 |
2N6485 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 521 |
2N718A |
NPN Small Signal General Purpose Amplifiers |
Fairchild Semiconductor |
| 522 |
2N721 |
PNP silicon annular transistor for high-frequency general-purpose amplifier applications |
Motorola |
| 523 |
2N918 |
RF NPN transistor for VHF low noise amplifier |
IPRS Baneasa |
| 524 |
2N929 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 525 |
2N929A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 526 |
2N930 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 527 |
2N930A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 528 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 529 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 530 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 531 |
2SA1037AKT146 |
PNP General Purpose Amplification Transistor |
ROHM |
| 532 |
2SA1037P |
Complementary Dual General Purpose Amplifier Transistor |
ON Semiconductor |
| 533 |
2SA1037P |
Complementary Dual General Purpose Amplifier Transistor |
ON Semiconductor |
| 534 |
2SA1125 |
Si PNP epitaxial planar. AF high voltage amplifier. |
Panasonic |
| 535 |
2SA1162 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 536 |
2SA1162GT1 |
General Purpose Amplifier Transistors |
ON Semiconductor |
| 537 |
2SA1163 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 538 |
2SA1182 |
Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 539 |
2SA1201 |
Transistor Silicon PNP Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications |
TOSHIBA |
| 540 |
2SA1202 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
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