| No. |
Part Name |
Description |
Manufacturer |
| 631 |
2SAR523MT2L |
PNP General Purpose Amplification Transistor |
ROHM |
| 632 |
2SAR523UB |
PNP General Purpose Amplification Transistor |
ROHM |
| 633 |
2SAR523UBTL |
PNP General Purpose Amplification Transistor |
ROHM |
| 634 |
2SB1109 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 635 |
2SB1110 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 636 |
2SB1244 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
Hitachi Semiconductor |
| 637 |
2SB1245 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
Hitachi Semiconductor |
| 638 |
2SB1295 |
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 639 |
2SB1651 |
For low-frequency and low-noise amplification |
Panasonic |
| 640 |
2SB1683 |
General-Purpose Amplifier Transistors |
SANYO |
| 641 |
2SB1709 |
Genera purpose amplification(−12V, −1.5A) |
ROHM |
| 642 |
2SB1732 |
Genera purpose amplification(−12V, −1.5A) |
ROHM |
| 643 |
2SB439 |
Germanium PNP alloy junction transistor, low noise amplifier applications |
TOSHIBA |
| 644 |
2SB440 |
Germanium PNP alloy junction transistor, low noise amplifier applications |
TOSHIBA |
| 645 |
2SB633P |
General-Purpose Amplifier Transistors |
SANYO |
| 646 |
2SB646 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
Hitachi Semiconductor |
| 647 |
2SB646A |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
Hitachi Semiconductor |
| 648 |
2SB717 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
Hitachi Semiconductor |
| 649 |
2SB718 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
Hitachi Semiconductor |
| 650 |
2SB73 |
Germanium Transistor PNP Alloyed Junction Audio Frequency Low Noise Amplifier |
Hitachi Semiconductor |
| 651 |
2SB814 |
Si PNP epitaxial planar high voltage, low-noise amplifier |
Panasonic |
| 652 |
2SB817P |
General-Purpose Amplifier Transistors |
SANYO |
| 653 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 654 |
2SC1166 |
Silicon NPN epitaxial planar transistor, driver stage amplifier applications, complementary to 2SA661 |
TOSHIBA |
| 655 |
2SC1199 |
Silicon NPN epitaxial planar transistor, RF Wide-Band low-noise amplifier |
TOSHIBA |
| 656 |
2SC1222 |
NPN silicon transistor designed for use in AF low noise amplifier |
NEC |
| 657 |
2SC1222 |
Transistors LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
| 658 |
2SC1335 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
Unknow |
| 659 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
| 660 |
2SC1514 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
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