| No. |
Part Name |
Description |
Manufacturer |
| 661 |
2SC1623 |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 662 |
2SC1627 |
Transistor Silicon NPN Epitaxial Type (PCT process) Driver Stage Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
| 663 |
2SC1627 |
Transistor Silicon NPN Epitaxial Type (PCT process) Driver Stage Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
| 664 |
2SC1627A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 665 |
2SC1627A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 666 |
2SC1685 |
Low Level and General Purpose Amplifiera |
Micro Electronics |
| 667 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 668 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 669 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 670 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 671 |
2SC1815L |
TRANSISTOR (AUDIO FREQUENCY VOLTAGE/ LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 672 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 673 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 674 |
2SC2107 |
NPN Silicon Epitaxial Transistor, Industrial Use, General Purpose Amplifier and Switches |
NEC |
| 675 |
2SC2148 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 676 |
2SC2149 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 677 |
2SC2235 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 678 |
2SC2278 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
| 679 |
2SC2350 |
NPN silicon epitaxial transistor, high frequency low noise amplifier |
NEC |
| 680 |
2SC2351 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 681 |
2SC2412KT146 |
NPN General Purpose Amplification Transistor |
ROHM |
| 682 |
2SC2498 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 683 |
2SC2570A |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 684 |
2SC2570A-T |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 685 |
2SC2671 |
Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
Panasonic |
| 686 |
2SC2671(H) |
Si NPN epitaxial planar. UHF low-noise amplifier. |
Panasonic |
| 687 |
2SC2712 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 688 |
2SC2712GT1 |
General Purpose Amplifier Transistor |
ON Semiconductor |
| 689 |
2SC2713 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 690 |
2SC2737 |
NPN silicon transistor designed for low noise amplifier of VHF/UHF band |
NEC |
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