| No. |
Part Name |
Description |
Manufacturer |
| 511 |
1N4701 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 512 |
1N4816 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 513 |
1N4817 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 514 |
1N4818 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 515 |
1N4819 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 516 |
1N4820 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 517 |
1N4821 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 518 |
1N4822 |
V(rrm): 600V; 1.5A molded silicon rectifier diode |
International Rectifier |
| 519 |
1N4852 |
V(rrm): 700V; 1.5A molded silicon rectifier diode |
International Rectifier |
| 520 |
1N4853 |
V(rrm): 800V; 1.5A molded silicon rectifier diode |
International Rectifier |
| 521 |
1N4854 |
V(rrm): 1000V; 1.5A molded silicon rectifier diode |
International Rectifier |
| 522 |
1N485B |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 523 |
1N4864 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 524 |
1N5052 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 525 |
1N5053 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 526 |
1N5054 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
| 527 |
1N5719 |
SILICON PIN DIODE |
Advanced Semiconductor |
| 528 |
1N6263 |
Leaded Silicon Diode Schottky |
Central Semiconductor |
| 529 |
1N645 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 530 |
1N645 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 531 |
1N646 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 532 |
1N6469US |
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS |
Microsemi |
| 533 |
1N647 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 534 |
1N647 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 535 |
1N6470US |
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS |
Microsemi |
| 536 |
1N6471US |
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS |
Microsemi |
| 537 |
1N6472US |
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS |
Microsemi |
| 538 |
1N6473US |
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS |
Microsemi |
| 539 |
1N6474US |
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS |
Microsemi |
| 540 |
1N6475US |
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS |
Microsemi |
| | | |
