| No. |
Part Name |
Description |
Manufacturer |
| 541 |
1N6476US |
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS |
Microsemi |
| 542 |
1N648 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 543 |
1N649 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 544 |
1N649 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 545 |
1N821 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 546 |
1N821A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 547 |
1N821UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 548 |
1N821UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 549 |
1N822UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 550 |
1N823 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 551 |
1N823A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 552 |
1N823UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 553 |
1N824UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 554 |
1N825 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 555 |
1N825A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 556 |
1N825UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 557 |
1N826UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 558 |
1N827 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 559 |
1N827A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 560 |
1N827UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 561 |
1N828UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 562 |
1N829 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 563 |
1N829A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 564 |
1N829UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 565 |
1N914 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 566 |
1N914 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 567 |
1N914 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 568 |
1N914 |
Glass passivated silicon switching diodes for medium and small currents |
Texas Instruments |
| 569 |
1N914A |
Silicon signal diode - high speed switching |
SESCOSEM |
| 570 |
1N914A |
Glass passivated silicon switching diodes for medium and small currents |
Texas Instruments |
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