| No. |
Part Name |
Description |
Manufacturer |
| 661 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 662 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 663 |
1S920 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 664 |
1S920 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 665 |
1S921 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 666 |
1S921 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 667 |
1S922 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 668 |
1S922 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 669 |
1S923 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 670 |
1S923 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 671 |
1SS108 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 672 |
1SS118 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 673 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 674 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 675 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 676 |
1SS190 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 677 |
1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 678 |
1SS196 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 679 |
1SS199 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 680 |
1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 681 |
1SS200 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 682 |
1SS201 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 683 |
1SS226 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 684 |
1SS250 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 685 |
1SS272 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 686 |
1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 687 |
1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 688 |
1SS300 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 689 |
1SS301 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 690 |
1SS302 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| | | |
