No. |
Part Name |
Description |
Manufacturer |
511 |
HMF2M32B4V |
Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V |
etc |
512 |
HMF2M32B4V-120 |
Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V |
etc |
513 |
HMF2M32B4V-70 |
Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V |
etc |
514 |
HMF2M32B4V-80 |
Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V |
etc |
515 |
HMF2M32B4V-90 |
Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V |
etc |
516 |
IPSPAC-POWR1208-01T44E |
In-system programmable power supply sequencing controller and monitor. |
Lattice Semiconductor |
517 |
IPSPAC-POWR1208-01T44I |
In-system programmable power supply sequencing controller and monitor. |
Lattice Semiconductor |
518 |
IPSPAC-POWR1208-01TN44E |
In-system programmable power supply sequencing controller and monitor. |
Lattice Semiconductor |
519 |
IPSPAC-POWR1208-01TN44I |
In-system programmable power supply sequencing controller and monitor. |
Lattice Semiconductor |
520 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
521 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
522 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
523 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
524 |
IRF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. |
General Electric Solid State |
525 |
IRF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. |
General Electric Solid State |
526 |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
General Electric Solid State |
527 |
IRF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. |
General Electric Solid State |
528 |
IRF150 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
529 |
IRF151 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
530 |
IRF152 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
531 |
IRF153 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
532 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
533 |
IRF221 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
534 |
IRF222 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
535 |
IRF223 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
536 |
IRF230 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
537 |
IRF231 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
538 |
IRF232 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
539 |
IRF233 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
540 |
IRF241 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
| | | |