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Datasheets for IN-S

Datasheets found :: 11152
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No. Part Name Description Manufacturer
511 HMF2M32B4V Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V etc
512 HMF2M32B4V-120 Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V etc
513 HMF2M32B4V-70 Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V etc
514 HMF2M32B4V-80 Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V etc
515 HMF2M32B4V-90 Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V etc
516 IPSPAC-POWR1208-01T44E In-system programmable power supply sequencing controller and monitor. Lattice Semiconductor
517 IPSPAC-POWR1208-01T44I In-system programmable power supply sequencing controller and monitor. Lattice Semiconductor
518 IPSPAC-POWR1208-01TN44E In-system programmable power supply sequencing controller and monitor. Lattice Semiconductor
519 IPSPAC-POWR1208-01TN44I In-system programmable power supply sequencing controller and monitor. Lattice Semiconductor
520 IRF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. General Electric Solid State
521 IRF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. General Electric Solid State
522 IRF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. General Electric Solid State
523 IRF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. General Electric Solid State
524 IRF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. General Electric Solid State
525 IRF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. General Electric Solid State
526 IRF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. General Electric Solid State
527 IRF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. General Electric Solid State
528 IRF150 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
529 IRF151 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
530 IRF152 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
531 IRF153 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
532 IRF220 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
533 IRF221 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
534 IRF222 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
535 IRF223 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
536 IRF230 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
537 IRF231 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
538 IRF232 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
539 IRF233 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
540 IRF241 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. General Electric Solid State


Datasheets found :: 11152
Page: | 14 | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 |



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