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Datasheets for IN-S

Datasheets found :: 11152
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No. Part Name Description Manufacturer
601 IRF821 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
602 IRF822 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
603 IRF823 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
604 IRF830 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
605 IRF831 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
606 IRF832 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
607 IRF833 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
608 IRFF110 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. General Electric Solid State
609 IRFF111 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A. General Electric Solid State
610 IRFF112 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. General Electric Solid State
611 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. General Electric Solid State
612 IRFF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A. General Electric Solid State
613 IRFF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. General Electric Solid State
614 IRFF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. General Electric Solid State
615 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. General Electric Solid State
616 IRFF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. General Electric Solid State
617 IRFF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. General Electric Solid State
618 IRFF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. General Electric Solid State
619 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. General Electric Solid State
620 IRFF310 Power MOSFET field effect power transistor. Drain-source voltage 400 V. General Electric Solid State
621 IRFF311 Power MOSFET field effect power transistor. Drain-source voltage 350 V. General Electric Solid State
622 IRFF312 Power MOSFET field effect power transistor. Drain-source voltage 400 V. General Electric Solid State
623 IRFF313 Power MOSFET field effect power transistor. Drain-source voltage 350 V. General Electric Solid State
624 ISGAL22V10C-7LK In-System Programmable E2CMOS PLD Lattice Semiconductor
625 ISL88016 6-Pin Voltage Supervisors with Pin-Selectable Voltage Trip Points Intersil
626 ISL88017 6-Pin Voltage Supervisors with Pin-Selectable Voltage Trip Points Intersil
627 ISPCLOCK5600 In-System Programmable, Zero-Delay Clock Generator with Universal Fan-Out Buffer Lattice Semiconductor
628 ISPGAL22V10 In-System Programmable E2CMOS PLD Lattice Semiconductor
629 ISPGAL22V10B-10LJ In-System Programmable E2CMOS PLD Lattice Semiconductor
630 ISPGAL22V10B-15LJ In-System Programmable E2CMOS PLD Lattice Semiconductor


Datasheets found :: 11152
Page: | 17 | 18 | 19 | 20 | 21 | 22 | 23 | 24 | 25 |



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