No. |
Part Name |
Description |
Manufacturer |
511 |
2N5953 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
512 |
2N6449 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
513 |
2N6449 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
514 |
2N6450 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
515 |
2N6450 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
516 |
2N6451 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
517 |
2N6451 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
518 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
519 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
520 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
521 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
522 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
523 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
524 |
2N6550 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
525 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
526 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
527 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
528 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
529 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
530 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
531 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
532 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
533 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
534 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
535 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
536 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
537 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
538 |
2N7000 |
N-channel enhancement mode field-effect transistor |
Philips |
539 |
2N7002 |
N-channel enhancement mode field-effect transistor |
Philips |
540 |
2SJ11 |
Field-effect transistor |
TOSHIBA |
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