No. |
Part Name |
Description |
Manufacturer |
541 |
2SJ12 |
Field-effect transistor |
TOSHIBA |
542 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
543 |
2SJ13 |
Field-effect transistor |
TOSHIBA |
544 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
545 |
2SK0658 |
Field-effect Transistor - Silicon N Channel MOS Type |
Panasonic |
546 |
2SK105 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
547 |
2SK113 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
548 |
2SK152 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
549 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
550 |
2SK363 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
551 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
552 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
553 |
2SK540 |
N-Channel Junction Field-Effect Transistor |
NEC |
554 |
3N124 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
555 |
3N124 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
556 |
3N125 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
557 |
3N125 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
558 |
3N126 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
559 |
3N126 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
560 |
3N128 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
561 |
3N128 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
562 |
3N128 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
563 |
3N138 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
564 |
3N138 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
565 |
3N139 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
566 |
3N139 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
567 |
3N140 |
N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor |
Motorola |
568 |
3N140 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
569 |
3N140 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
570 |
3N141 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
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