No. |
Part Name |
Description |
Manufacturer |
511 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
512 |
2N6123 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
513 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
514 |
2N6124 |
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
515 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
516 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
517 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
518 |
2N6126 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
519 |
2N6211 |
MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS |
Boca Semiconductor Corporation |
520 |
2N6211 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
521 |
2N6211 |
2A silicon medium-power, High-Voltage PNP transistor 35W |
Motorola |
522 |
2N6212 |
MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS |
Boca Semiconductor Corporation |
523 |
2N6212 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
524 |
2N6212 |
2A silicon medium-power, High-Voltage PNP transistor 35W |
Motorola |
525 |
2N6213 |
MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS |
Boca Semiconductor Corporation |
526 |
2N6213 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
527 |
2N6213 |
2A silicon medium-power, High-Voltage PNP transistor 35W |
Motorola |
528 |
2N6214 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
529 |
2N6261 |
HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR |
SemeLAB |
530 |
2N6263 |
Medium power silicon N-P-N transistor. 140V, 20W. |
General Electric Solid State |
531 |
2N6264 |
Medium power silicon N-P-N transistor. 170V, 50W. |
General Electric Solid State |
532 |
2N6288 |
40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 |
Continental Device India Limited |
533 |
2N6290 |
40.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 2 hFE. Complementary 2N6109 |
Continental Device India Limited |
534 |
2N6292 |
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
535 |
2N6312 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
536 |
2N6313 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
537 |
2N6314 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
538 |
2N6315 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
539 |
2N6316 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
540 |
2N6317 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
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