| No. |
Part Name |
Description |
Manufacturer |
| 601 |
2N696 |
Silicon n-p-n medium power transistor |
Mullard |
| 602 |
2N697 |
Silicon n-p-n medium power transistor |
Mullard |
| 603 |
2N699 |
NPN silicon annular transistor designed for medium-current switching and amplifier applications |
Motorola |
| 604 |
2N7000 |
Medium Power MOSFETS |
Micro Commercial Components |
| 605 |
2N7002K |
N-channel TrenchMOS intermediate level FET |
Nexperia |
| 606 |
2N7002K |
N-channel TrenchMOS intermediate level FET |
NXP Semiconductors |
| 607 |
2N718 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
| 608 |
2N731 |
NPN silicon transistor medium power, audio-frequency applications in industrial service |
Motorola |
| 609 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
| 610 |
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 611 |
2SA1160 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 612 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 613 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
| 614 |
2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 615 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 616 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 617 |
2SA1430 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 618 |
2SA1431 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 619 |
2SA1515 |
Medium Power Transistor |
ROHM |
| 620 |
2SA1723 |
PNP Epitaxial Planar Silicon Transistors High-Frequency Amplifier, Medium-Power Amplifier Applications |
SANYO |
| 621 |
2SA1727 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 622 |
2SA1759 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 623 |
2SA1776 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 624 |
2SA1797 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 625 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 626 |
2SA1802 |
Transistor Silicon PNP Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 627 |
2SA1812 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 628 |
2SA1834 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 629 |
2SA1862 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 630 |
2SA1893 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
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