| No. |
Part Name |
Description |
Manufacturer |
| 5281 |
2SC1684 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 5282 |
2SC1685 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 5283 |
2SC1687 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 5284 |
2SC1729 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5285 |
2SC1763 |
Silicon NPN epitaxial planar transistor 2-30MHz SSB linear 40W power, 28V supply voltage |
TOSHIBA |
| 5286 |
2SC1764 |
Silicon NPN epitaxial planar transistor 2-30MHz SSB linear 80W power, 28V supply voltage |
TOSHIBA |
| 5287 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 5288 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 5289 |
2SC1815L |
TRANSISTOR (AUDIO FREQUENCY VOLTAGE/ LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 5290 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
| 5291 |
2SC1924 |
NPN silicon high speed switching transistor (This datasheet of NE32740A series is also the datasheet of 2SC1924, see the Electrical Characteristics table) |
NEC |
| 5292 |
2SC1925 |
NPN silicon high speed switching transistor (This datasheet NE32740B series is also the datasheet of 2SC1925, see the Electrical Characteristics table) |
NEC |
| 5293 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
| 5294 |
2SC1944 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5295 |
2SC1945 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5296 |
2SC1946 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5297 |
2SC1947 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5298 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 5299 |
2SC1965 |
NPN epitaxial planar RF power VHF transistor 6W 13.5V |
Mitsubishi Electric Corporation |
| 5300 |
2SC1966 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5301 |
2SC1967 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5302 |
2SC1968 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5303 |
2SC1968A |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5304 |
2SC1969 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5305 |
2SC1970 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5306 |
2SC1971 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5307 |
2SC1973 |
TRANSISTOR NPN EPITAXIAL PLANAR |
Panasonic |
| 5308 |
2SC1980 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 5309 |
2SC199 |
Industrial Transistor Specification Table |
TOSHIBA |
| 5310 |
2SC199 |
High-Frequency Transistor SW BAND |
TOSHIBA |
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