| No. |
Part Name |
Description |
Manufacturer |
| 5311 |
2SC2025 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC2025, see the Electrical Characteristics table) |
NEC |
| 5312 |
2SC2058 |
TRANSISTOR NPN EPITAXIAL PLANAR |
ROHM |
| 5313 |
2SC2060 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 5314 |
2SC2061 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 5315 |
2SC2073A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS |
TOSHIBA |
| 5316 |
2SC2078 |
NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amplifier Applications |
SANYO |
| 5317 |
2SC2085 |
Power Transistor - Silicon PNP Triple-Diffused Planar Type |
Panasonic |
| 5318 |
2SC2099 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 5319 |
2SC21 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 5320 |
2SC2103A |
Silicon NPN epitaxial planar VHF band power transistor 27W |
TOSHIBA |
| 5321 |
2SC2106 |
Silicon NPN epitaxial planar UHF band power transistor 12W |
TOSHIBA |
| 5322 |
2SC2120 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Power Amplifier Applications |
TOSHIBA |
| 5323 |
2SC2131 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5324 |
2SC2133 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5325 |
2SC2134 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5326 |
2SC2150 |
NPN silicon microwave transistor (This datasheet of NE57835 is also the datasheet of 2SC2150, see the Electrical Characteristics table) |
NEC |
| 5327 |
2SC2188 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 5328 |
2SC2206 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 5329 |
2SC2215 |
Silicon NPN planar transistor type |
TOSHIBA |
| 5330 |
2SC2216 |
Transistor Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications |
TOSHIBA |
| 5331 |
2SC2217 |
NPN silicon High Frequency Transistor (This datasheet NE21903 is also the datasheet of 2SC2217, see the Electrical Characteristics table) |
NEC |
| 5332 |
2SC2220 |
Silicon NPN triple diffused MESA high power switching transistor |
TOSHIBA |
| 5333 |
2SC2223 |
HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 5334 |
2SC2229 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE BLACK AND WHITE TV VIDEO OUTPUT, HIGH VOLTAGE Switching, Driver Stage Audio Amplifier Applications |
TOSHIBA |
| 5335 |
2SC2230 |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 5336 |
2SC2230A |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 5337 |
2SC2235 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5338 |
2SC2236 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5339 |
2SC2237 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5340 |
2SC2238 |
SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS) |
Unknow |
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