| No. |
Part Name |
Description |
Manufacturer |
| 5431 |
2SC2782 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5432 |
2SC2783 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 5433 |
2SC2792 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE, SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. |
TOSHIBA |
| 5434 |
2SC2797 |
NPN epitaxial planar RF power UHF transistor 5W 24V |
Mitsubishi Electric Corporation |
| 5435 |
2SC2798 |
NPN epitaxial planar RF power UHF transistor 12W 24V |
Mitsubishi Electric Corporation |
| 5436 |
2SC2799 |
NPN epitaxial planar RF power UHF transistor 25W 24V |
Mitsubishi Electric Corporation |
| 5437 |
2SC281 |
Silicon NPN Epitaxial LTP Transistor Vcbo=30V, Pc=200mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 5438 |
2SC2814 |
NPN Epitaxial Planar Silicon Transistor High-Friquency General-Purpose Amplifier Applications |
SANYO |
| 5439 |
2SC283 |
Silicon NPN Epitaxial LTP Transistor Vcbo=50V, Pc=350mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 5440 |
2SC2839 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
| 5441 |
2SC2850K |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE081090 series is also the datasheet of 2SC2850K, see the Electrical Characteristics table) |
NEC |
| 5442 |
2SC2850M |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE081091 series is also the datasheet of 2SC2850M, see the Electrical Characteristics table) |
NEC |
| 5443 |
2SC2857 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications |
SANYO |
| 5444 |
2SC2859 |
Transistor Silicon NPN Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 5445 |
2SC2868 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 5446 |
2SC2873 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 5447 |
2SC2878 |
Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications |
TOSHIBA |
| 5448 |
2SC2879 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 5449 |
2SC2880 |
Transistor Silicon NPN Triple Diffused Type (PCT process) High Voltage Switching Applications |
TOSHIBA |
| 5450 |
2SC2881 |
Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications |
TOSHIBA |
| 5451 |
2SC2882 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
| 5452 |
2SC2883 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5453 |
2SC2884 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5454 |
2SC288A(I*B) |
2SC288A(I·B) NPN silicon epitaxial transistor DISK MOLD for UHF oscillator |
NEC |
| 5455 |
2SC2904 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5456 |
2SC2905 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 5457 |
2SC2922 |
Transistor For Power Amplifier |
Sanken |
| 5458 |
2SC2923 |
Power Transistor - Silicon PNP Triple-Diffused Planar Type |
Panasonic |
| 5459 |
2SC2925 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 5460 |
2SC2932 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
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