| No. |
Part Name |
Description |
Manufacturer |
| 5311 |
2N5087 |
Low-Level, Low-Noise PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 5312 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 5313 |
2N5087 |
Small Signal Amplifier PNP |
ON Semiconductor |
| 5314 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 5315 |
2N5087-D |
Amplifier Transistor PNP Silicon |
ON Semiconductor |
| 5316 |
2N5087RLRA |
Small Signal Amplifier PNP |
ON Semiconductor |
| 5317 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 5318 |
2N5088 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5319 |
2N5088 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5320 |
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 5321 |
2N5088-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 5322 |
2N5088RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5323 |
2N5088RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5324 |
2N5088RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
| 5325 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 5326 |
2N5089 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5327 |
2N5089 |
Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 5328 |
2N5089RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5329 |
2N5089RLRE |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5330 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
| 5331 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
| 5332 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 5333 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 5334 |
2N5209 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 5335 |
2N5209 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
| 5336 |
2N5209-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 5337 |
2N5209RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
| 5338 |
2N5210 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 5339 |
2N5210 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
| 5340 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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