| No. |
Part Name |
Description |
Manufacturer |
| 5401 |
2N5486 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 5402 |
2N5490 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 5403 |
2N5492 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6109 |
SESCOSEM |
| 5404 |
2N5494 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6111 |
SESCOSEM |
| 5405 |
2N5496 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6107 |
SESCOSEM |
| 5406 |
2N5550 |
Amplifier Transistors |
Motorola |
| 5407 |
2N5550 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5408 |
2N5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 5409 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 5410 |
2N5550-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 5411 |
2N5550RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5412 |
2N5550RLRP |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5413 |
2N5551 |
NPN Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
| 5414 |
2N5551 |
Amplifier Transistors |
Motorola |
| 5415 |
2N5551 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5416 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 5417 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 5418 |
2N5551RL1 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5419 |
2N5551RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5420 |
2N5551RLRM |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5421 |
2N5551RLRP |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5422 |
2N5551ZL1 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 5423 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 5424 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 5425 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 5426 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 5427 |
2N6099 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM141 |
SESCOSEM |
| 5428 |
2N6101 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM142 |
SESCOSEM |
| 5429 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
| 5430 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
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