| No. |
Part Name |
Description |
Manufacturer |
| 5341 |
5KP110A |
110.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5342 |
5KP120 |
120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5343 |
5KP120A |
120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5344 |
5KP130 |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5345 |
5KP130A |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5346 |
5KP150 |
150.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5347 |
5KP150A |
150.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5348 |
5KP160 |
160.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5349 |
5KP160A |
160.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5350 |
5KP170 |
170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5351 |
5KP170A |
170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5352 |
5KP180 |
180.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5353 |
5KP180A |
180.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5354 |
630D |
Aluminum Capacitors, + 125°C, Miniature, Axial Lead, Extended Temperature Range, Economical, High reliability design, For timing circuit applications |
Vishay |
| 5355 |
672-1175M |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
etc |
| 5356 |
71RIA100 |
V(rrm/drm): 1000V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 5357 |
71RIA120 |
V(rrm/drm): 1200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 5358 |
7343-2USRC |
The series is specially designed for applications requiring higher brightness. |
Everlight Electronics |
| 5359 |
7343-S1060 |
The series is specially designed for applications requiring higher brightness. |
Everlight Electronics |
| 5360 |
75460 |
PERIPHERAL DRIVERS FOR HIGH-VOLTAGE HIGH-CURRENT DRIVER APPLICATIONS |
Texas Instruments |
| 5361 |
75464 |
PERIPHERAL DRIVERS FOR HIGH-VOLTAGE HIGH-CURRENT DRIVER APPLICATIONS |
Texas Instruments |
| 5362 |
800EXD28 |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5363 |
800EXD29 |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5364 |
800EXH22 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5365 |
800FXD29 |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5366 |
800JXH23 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5367 |
80264 |
NPN power RF transistor designed for Class C linear applications 1-4GHz |
SGS Thomson Microelectronics |
| 5368 |
81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 5369 |
81175M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 5370 |
81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
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