| No. |
Part Name |
Description |
Manufacturer |
| 5371 |
81390M |
Transistor designed for IFF avionics applicatios |
SGS Thomson Microelectronics |
| 5372 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 5373 |
81550M |
High power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 5374 |
81600M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 5375 |
81720-20 |
Transistor for communications applications |
SGS Thomson Microelectronics |
| 5376 |
81922-18 |
Transistor for communications applications |
SGS Thomson Microelectronics |
| 5377 |
81RIA100 |
V(rrm/drm): 1000V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 5378 |
82022-20 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
| 5379 |
82023-10 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 5380 |
82023-16 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 5381 |
82325-40 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 5382 |
82729-30 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5383 |
82729-60 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5384 |
82731-1 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 5385 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 5386 |
82931-55 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5387 |
82931-55N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5388 |
82931-55S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5389 |
83000 |
3.0GHz 0.5W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 5390 |
83001 |
3.0GHz 1.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 5391 |
83135-3 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 5392 |
854550-1 |
69.99 MHz SAW Bandpass Filter for CDMA Basestation Receiver Applications Part Number 854550-1 |
etc |
| 5393 |
8A10HS0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 5394 |
8A10HS1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 5395 |
8A10PS0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 5396 |
8A10PS1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 5397 |
8A11HS0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 5398 |
8A11HS1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 5399 |
8A11PS0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 5400 |
8A11PS1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
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