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Datasheets for ELECTRO

Datasheets found :: 200109
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No. Part Name Description Manufacturer
5371 2N4146 Reverse Blocking Triode Thyristor-SCR Transitron Electronic
5372 2N4147 Reverse Blocking Triode Thyristor-SCR Transitron Electronic
5373 2N4148 Reverse Blocking Triode Thyristor-SCR Transitron Electronic
5374 2N4149 Reverse Blocking Triode Thyristor-SCR Transitron Electronic
5375 2N4234 SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES Micro Electronics
5376 2N4235 SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES Micro Electronics
5377 2N4237 SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES Micro Electronics
5378 2N4238 SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES Micro Electronics
5379 2N4273 NPN Medium Power (up to 25 Watts) silicon transistor Transitron Electronic
5380 2N4276 Germanium Power Transistors GPD Optoelectronic Devices
5381 2N4332 Reverse Blocking Triode Thyristor-SCR Transitron Electronic
5382 2N4333 Reverse Blocking Triode Thyristor-SCR Transitron Electronic
5383 2N4334 Reverse Blocking Triode Thyristor-SCR Transitron Electronic
5384 2N4335 Reverse Blocking Triode Thyristor-SCR Transitron Electronic
5385 2N4336 Reverse Blocking Triode Thyristor-SCR Transitron Electronic
5386 2N4337 Reverse Blocking Triode Thyristor-SCR Transitron Electronic
5387 2N4387 PNP Silicon Medium Power Transistor (up to 25 watts) Transitron Electronic
5388 2N4388 PNP Silicon Medium Power Transistor (up to 25 watts) Transitron Electronic
5389 2N4400 NPN SILICON PLANAR EPITAXIAL TRANSISTORS Micro Electronics
5390 2N4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS Micro Electronics
5391 2N4401 TO-92 Plastic-Encapsulated Transistors TRANSYS Electronics Limited
5392 2N4401SC EPITAXIAL PLANAR NPN TRANSISTOR Korea Electronics (KEC)
5393 2N4402 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Micro Electronics
5394 2N4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Micro Electronics
5395 2N4403SC EPITAXIAL PLANAR PNP TRANSISTOR Korea Electronics (KEC)
5396 2N4416 N-CHANNEL FET Micro Electronics
5397 2N4416A N-CHANNEL FET Micro Electronics
5398 2N4427 ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W SGS Thomson Microelectronics
5399 2N4427 VHF OSCILLATOR POWER AMPLIFIER ST Microelectronics
5400 2N4429 Microwave Power NPN Transistor for CLASS C applications SGS Thomson Microelectronics


Datasheets found :: 200109
Page: | 176 | 177 | 178 | 179 | 180 | 181 | 182 | 183 | 184 |



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