| No. |
Part Name |
Description |
Manufacturer |
| 5401 |
2N4430 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 5402 |
2N4431 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 5403 |
2N4440 |
Wideband VHF-UHF class C NPN transistor |
SGS Thomson Microelectronics |
| 5404 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 5405 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 5406 |
2N5016 |
Wideband VHF-UHF Class C NPN transistor 15W 28V |
SGS Thomson Microelectronics |
| 5407 |
2N5038 |
HIGH CURRENT NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
| 5408 |
2N5038 |
HIGH CURRENT NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
| 5409 |
2N5038 |
HIGH CURRENT NPN SILICON TRANSISTOR |
ST Microelectronics |
| 5410 |
2N5060 |
Reverse Blocking Triode Thyristor (SCR) TO92 EPOXY PACKAGE |
Transitron Electronic |
| 5411 |
2N5061 |
Reverse Blocking Triode Thyristor (SCR) TO92 EPOXY PACKAGE |
Transitron Electronic |
| 5412 |
2N5062 |
Reverse Blocking Triode Thyristor (SCR) TO92 EPOXY PACKAGE |
Transitron Electronic |
| 5413 |
2N5063 |
Reverse Blocking Triode Thyristor (SCR) TO92 EPOXY PACKAGE |
Transitron Electronic |
| 5414 |
2N5064 |
Sensitive SCRs |
Teccor Electronics |
| 5415 |
2N5064 |
Reverse Blocking Triode Thyristor (SCR) TO92 EPOXY PACKAGE |
Transitron Electronic |
| 5416 |
2N5065 |
400 V, 0.8 A sensitive SCR |
Teccor Electronics |
| 5417 |
2N5086 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 5418 |
2N5086 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 5419 |
2N5087 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 5420 |
2N5088 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 5421 |
2N5089 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 5422 |
2N5089 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 5423 |
2N5090 |
Wideband VHF-UHF Class C NPN transistor 1.2W 28V |
SGS Thomson Microelectronics |
| 5424 |
2N5153ESY1 |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
| 5425 |
2N5153ESYHRG |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
| 5426 |
2N5153ESYHRT |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
| 5427 |
2N5153HR |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
| 5428 |
2N5153HRG |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
| 5429 |
2N5153HRT |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
| 5430 |
2N5153RESYHRG |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
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