| No. |
Part Name |
Description |
Manufacturer |
| 541 |
CM100BU-12H |
Four IGBTMOD 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 542 |
CM100DU-12F |
Trench Gate Design Dual IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 543 |
CM100DU-12H |
Dual IGBTMOD 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 544 |
CM100DU-24F |
Trench Gate Design Dual IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 545 |
CM100DU-24H |
Dual IGBTMOD 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 546 |
CM100DU-24NFH |
MITSUBISHI IGBT MODULES |
Mitsubishi Electric Corporation |
| 547 |
CM100DU-34KA |
Dual IGBTMOD 100 Amperes/1700 Volts |
Powerex Power Semiconductors |
| 548 |
CM100DY-12H |
HIGH POWER SWITCHING USE INSULATED TYPE IGBT MODULES |
Mitsubishi Electric Corporation |
| 549 |
CM100DY-12H |
Dual IGBTMOD 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 550 |
CM100DY-24H |
HIGH POWER SWITCHING USE INSULATED TYPE IGBT MODULES |
Mitsubishi Electric Corporation |
| 551 |
CM100DY-24H |
Dual IGBTMOD 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 552 |
CM100DY-28H |
Dual IGBTMOD 100 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 553 |
CM100E3U-12H |
Chopper IGBTMOD 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 554 |
CM100E3U-24H |
Chopper IGBTMOD 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 555 |
CM100TF-12H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 556 |
CM100TF-12H |
Six-IGBT IGBTMOD 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 557 |
CM100TF-24H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 558 |
CM100TF-24H |
Six-IGBT IGBTMOD 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 559 |
CM100TF-28H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 560 |
CM100TF-28H |
Six-IGBT IGBTMOD 100 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 561 |
CM100TJ-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 562 |
CM100TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 563 |
CM100TU-12F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 564 |
CM100TU-12H |
Six IGBTMOD 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 565 |
CM100TU-24F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 566 |
CM100TU-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 567 |
CM100TU-24H |
Six IGBTMOD 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 568 |
CM10MD-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 569 |
CM10MD-24H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 570 |
CM10MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
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