| No. |
Part Name |
Description |
Manufacturer |
| 601 |
CM200DU-12F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 602 |
CM200DU-12H |
Dual IGBTMOD 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 603 |
CM200DU-24F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 604 |
CM200DU-24F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 605 |
CM200DU-24H |
Dual IGBTMOD 200 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 606 |
CM200DU-34KA |
Dual IGBTMOD KA-Series Module 200 Amperes/1700 Volts |
Powerex Power Semiconductors |
| 607 |
CM200DY-12H |
HIGH POWER SWITCHING USE INSULATED TYPE IGBT MODULES |
Mitsubishi Electric Corporation |
| 608 |
CM200DY-12H |
Dual IGBTMOD 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 609 |
CM200DY-24H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 610 |
CM200DY-24H |
Dual IGBTMOD 200 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 611 |
CM200DY-24NF |
MITSUBISHI IGBT MODULES |
Mitsubishi Electric Corporation |
| 612 |
CM200DY-28H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 613 |
CM200DY-28H |
Dual IGBTMOD 200 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 614 |
CM200E3U-12H |
Chopper IGBTMOD 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 615 |
CM200HA-24H |
Single IGBTMOD 200 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 616 |
CM200TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 617 |
CM200TU-12F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 618 |
CM200TU-12H |
Six IGBTMOD 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 619 |
CM200TU-5F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/250 Volts |
Powerex Power Semiconductors |
| 620 |
CM20AD00-12H |
MITSUBISHI IGBT MODULES |
Mitsubishi Electric Corporation |
| 621 |
CM20MD-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 622 |
CM20MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 623 |
CM20MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 624 |
CM20TF-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 625 |
CM20TF-12H |
Six-IGBT IGBTMOD 20 Amperes/600 Volts |
Powerex Power Semiconductors |
| 626 |
CM20TF-24H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 627 |
CM20TF-24H |
Six-IGBT IGBTMOD 20 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 628 |
CM25MD-24H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 629 |
CM300DU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 630 |
CM300DU-12F |
Trench Gate Design Dual IGBTMOD�� 300 Amperes/600 Volts |
Powerex Power Semiconductors |
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