No. |
Part Name |
Description |
Manufacturer |
541 |
2N5951 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
542 |
2N5952 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
543 |
2N5953 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
544 |
2N6449 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
545 |
2N6449 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
546 |
2N6450 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
547 |
2N6450 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
548 |
2N6451 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
549 |
2N6451 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
550 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
551 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
552 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
553 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
554 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
555 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
556 |
2N6550 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
557 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
558 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
559 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
560 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
561 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
562 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
563 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
564 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
565 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
566 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
567 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
568 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
569 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
570 |
2N7000 |
N-channel enhancement mode field-effect transistor |
Philips |
| | | |