No. |
Part Name |
Description |
Manufacturer |
661 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
662 |
3N156A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
663 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
664 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
665 |
3N157 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
666 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
667 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
668 |
3N157A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
669 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
670 |
3N158 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
671 |
3N158 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
672 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
673 |
3N158A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
674 |
3N158A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
675 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
676 |
3N159 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
677 |
3N159 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
678 |
3N159 |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz |
RCA Solid State |
679 |
3N160 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
680 |
3N160 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
681 |
3N161 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
682 |
3N161 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
683 |
3N163 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
684 |
3N164 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
685 |
3N169 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
686 |
3N170 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
687 |
3N171 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
688 |
3N174 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
689 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
690 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
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