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Datasheets for -EFFECT

Datasheets found :: 2712
Page: | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 | 23 |
No. Part Name Description Manufacturer
541 2N5951 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
542 2N5952 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
543 2N5953 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
544 2N6449 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
545 2N6449 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
546 2N6450 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
547 2N6450 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
548 2N6451 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
549 2N6451 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
550 2N6452 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
551 2N6452 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
552 2N6453 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
553 2N6453 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
554 2N6454 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
555 2N6454 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
556 2N6550 N-Channel silicon junction field-effect transistor InterFET Corporation
557 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
558 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
559 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
560 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
561 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
562 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
563 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
564 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
565 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
566 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
567 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
568 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
569 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
570 2N7000 N-channel enhancement mode field-effect transistor Philips


Datasheets found :: 2712
Page: | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 | 23 |



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