| No. |
Part Name |
Description |
Manufacturer |
| 661 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 662 |
3N156A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 663 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 664 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 665 |
3N157 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 666 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 667 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 668 |
3N157A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 669 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 670 |
3N158 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 671 |
3N158 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 672 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 673 |
3N158A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 674 |
3N158A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 675 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 676 |
3N159 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 677 |
3N159 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 678 |
3N159 |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz |
RCA Solid State |
| 679 |
3N160 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
| 680 |
3N160 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 681 |
3N161 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
| 682 |
3N161 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 683 |
3N163 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 684 |
3N164 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 685 |
3N169 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 686 |
3N170 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 687 |
3N171 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 688 |
3N174 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 689 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 690 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
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