| No. |
Part Name |
Description |
Manufacturer |
| 691 |
3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Vaishali Semiconductor |
| 692 |
3N200 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 693 |
3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Intersil |
| 694 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
| 695 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 696 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 697 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 698 |
3N204 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 699 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 700 |
3N205 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 701 |
3N205 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 702 |
3N206 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 703 |
3N206 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 704 |
3N207 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 705 |
3N208 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 706 |
3N211 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 707 |
3N212 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 708 |
3N213 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 709 |
3N214 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 710 |
3N215 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 711 |
3N216 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 712 |
3N217 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 713 |
3N89 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 714 |
3N96 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 715 |
3N97 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 716 |
3N98 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 717 |
3N99 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 718 |
3SK134B |
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 719 |
3SK135A |
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
NEC |
| 720 |
3SK142 |
Field-effect Transistors - Silicon N Channel 4-pole MOS Type - For UHF high-gain low-noise amplification |
Panasonic |
| | | |
