No. |
Part Name |
Description |
Manufacturer |
541 |
GM72V66841ELT-7 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
Hynix Semiconductor |
542 |
GM72V66841ELT-75 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
Hynix Semiconductor |
543 |
GM72V66841ELT-7J |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
Hynix Semiconductor |
544 |
GM72V66841ELT-7K |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
Hynix Semiconductor |
545 |
GM72V66841ELT-8 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
Hynix Semiconductor |
546 |
GM72V66841ET |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
Hynix Semiconductor |
547 |
GM72V66841ET-7 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
Hynix Semiconductor |
548 |
GM72V66841ET-7K |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
Hynix Semiconductor |
549 |
HM48416AP |
16384 word x 4 Bit Dynamic RAM |
Hitachi Semiconductor |
550 |
HM514100DLS-6 |
4,194,304-word x 1-bit dynamic RAM, 60ns |
Hitachi Semiconductor |
551 |
HM514100DLS-7 |
4,194,304-word x 1-bit dynamic RAM, 70ns |
Hitachi Semiconductor |
552 |
HM514100DLS-8 |
4,194,304-word x 1-bit dynamic RAM, 80ns |
Hitachi Semiconductor |
553 |
HM514100DS-6 |
4,194,304-word x 1-bit dynamic RAM, 60ns |
Hitachi Semiconductor |
554 |
HM514100DS-7 |
4,194,304-word x 1-bit dynamic RAM, 70ns |
Hitachi Semiconductor |
555 |
HM514100DS-8 |
4,194,304-word x 1-bit dynamic RAM, 80ns |
Hitachi Semiconductor |
556 |
HM514258AJP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
557 |
HM514258AJP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
558 |
HM514258AJP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
559 |
HM514258AJP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
560 |
HM514258AJP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
561 |
HM514258AP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
562 |
HM514258AP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
563 |
HM514258AP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
564 |
HM514258AP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
565 |
HM514258AP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
566 |
HM514258AZP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
567 |
HM514258AZP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
568 |
HM514258AZP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
569 |
HM514258AZP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
570 |
HM514258AZP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
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