No. |
Part Name |
Description |
Manufacturer |
571 |
HM514400A/AL/ASL SERIES |
1,048,576-word x 4-bit Dynamic RAM |
Hitachi Semiconductor |
572 |
HY51V18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
573 |
HY51V18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
574 |
HY51V18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
575 |
HY51V18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
576 |
HY51V18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
577 |
HY51V18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
578 |
HY51VS18163HGJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
579 |
HY51VS18163HGJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
580 |
HY51VS18163HGJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
581 |
HY51VS18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
582 |
HY51VS18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
583 |
HY51VS18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
584 |
HY51VS18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
585 |
HY51VS18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
586 |
HY51VS18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
587 |
HY51VS18163HGT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
588 |
HY51VS18163HGT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
589 |
HY51VS18163HGT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
590 |
HYB3116160BSJ |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
591 |
HYB3116160BSJ-50 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
592 |
HYB3116160BSJ-60 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
593 |
HYB3116160BSJ-70 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
594 |
HYB3116160BST-50 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
595 |
HYB3116160BST-60 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
596 |
HYB3116160BST-70 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
597 |
HYB3116400BJ-70 |
3.3V 4M x 4-Bit Dynamic RAM |
Siemens |
598 |
HYB3116400BJBTL-50 |
3.3V 4M x 4-Bit Dynamic RAM |
Siemens |
599 |
HYB3116400BJBTL-50 |
-3.3V 4M x 4-Bit Dynamic RAM |
Siemens |
600 |
HYB3116400BT-70 |
3.3V 4M x 4-Bit Dynamic RAM |
Siemens |
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